Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
600V 11A TO-251-3 aMOS MOSFET
