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N-Channel MOSFET 500V 12A TO-262-3 Through Hole

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 12A

Drain to Source Voltage (Vdss): 500V

Input Capacitance: 1.633nF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

,

Active

Package/Case: TO-220-3

Continuous Drain Current (ID): 12A

Drain to Source Voltage (Vdss): 500V

Input Capacitance: 1.633nF

600V 12A TO-262-3 Through Hole Power Transistor

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 12A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 2.1nF

MOSFET N-CH 500V 14A TO262F

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 14A

Drain to Source Voltage (Vdss): 500V

Input Capacitance: 2.297nF

MOSFET N-CH 500V 12A TO262

Not Recommended for New Design

Package/Case: TO-262

Continuous Drain Current (ID): 12A

Drain to Source Voltage (Vdss): 500V

Input Capacitance: 1.633nF