Search Results for &quot; BLF8G22LS-205VJ &quot;

Trans RF MOSFET N-CH 65V 7-Pin CDFM T/R

Surface Mount

Active

Package/Case: CDFM

Pin Count: 7

PCB: 7

Package Length (mm): 20.7(Max)

BLF8G22LS-200V,118

65V 200W Surface Mount FET

Volume Production

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.17GHz

Gain: 20dB

BLF8G22LS-200V,112

Trans RF MOSFET N-CH 65V 7-Pin CDFM Bulk

Volume Production

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.17GHz

Gain: 20dB

RF MOSFET Transistors BLF8G22LS-200GV/ACC-6L/REEL 13

Volume Production

Max Frequency: 2.17GHz

Min Frequency: 2.11GHz

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

BLF8G22LS-200V

RF Power Field-Effect Transistor,

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Search Results for "BLF8G22LS-205VJ"

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Trans RF MOSFET N-CH 65V 7-Pin CDFM T/R

Surface Mount

Active

Package/Case: CDFM

Pin Count: 7

PCB: 7

Package Length (mm): 20.7(Max)

BLF8G22LS-200V,118

65V 200W Surface Mount FET

Volume Production

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.17GHz

Gain: 20dB

BLF8G22LS-200V,112

Trans RF MOSFET N-CH 65V 7-Pin CDFM Bulk

Volume Production

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 2.17GHz

Gain: 20dB

RF MOSFET Transistors BLF8G22LS-200GV/ACC-6L/REEL 13

Volume Production

Max Frequency: 2.17GHz

Min Frequency: 2.11GHz

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

BLF8G22LS-200V

RF Power Field-Effect Transistor,