Search Results for "BSC320N20NS3G"

Filters

Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Datasheet

SMALL OUTLINE, R-PDSO-F5

Active

Continuous Drain Current (ID): 36A

Drain to Source Voltage (Vdss): 200V

Fall Time: 4ns

Gate to Source Voltage (Vgs): 20V

BSC320N20NS3GXT

Unknown

Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Datasheet

SMALL OUTLINE, R-PDSO-F5

Active

Contact Plating: Tin

Continuous Drain Current (ID): 36A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V

Search Results for "BSC320N20NS3G"

Filters

BSC320N20NS3G

Infineon

Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Datasheet

SMALL OUTLINE, R-PDSO-F5

Active

Continuous Drain Current (ID): 36A

Drain to Source Voltage (Vdss): 200V

Fall Time: 4ns

Gate to Source Voltage (Vgs): 20V

BSC320N20NS3GXT

Unknown

Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Datasheet

SMALL OUTLINE, R-PDSO-F5

Active

Contact Plating: Tin

Continuous Drain Current (ID): 36A

Drain to Source Voltage (Vdss): 200V

Gate to Source Voltage (Vgs): 20V