Search Results for "BSZ096N10LS5ATMA1"

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Power Field-Effect Transistor, 11A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8

SMALL OUTLINE, S-PDSO-N3

Active

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 72A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8, SOP-8

SMALL OUTLINE, R-PDSO-F5

Active

Max Operating Temperature: 175

Number of Terminals: 5

Min Operating Temperature: -55

Terminal Position: DUAL

Power Field-Effect Transistor, 11A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8

SMALL OUTLINE, S-PDSO-N3

Active

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 72A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8, SOP-8

SMALL OUTLINE, R-PDSO-F5

Active

Max Operating Temperature: 175

Number of Terminals: 5

Min Operating Temperature: -55

Terminal Position: DUAL