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Insulated Gate Bipolar Transistor,

,

Obsolete

Insulated Gate Bipolar Transistor,

,

Transferred

IGBT 1.2kV 300A 2.27kW Chassis Mount Module

Transferred

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.85V

Collector-emitter Voltage-Max: 2.25V

Insulated Gate Bipolar Transistor

,

Active