Search Results for &quot; FDZ5.6 &quot;

Unknown

Package/Case: Module

Frequency: 24GHz

Max Operating Temperature: 100°C

Min Operating Temperature: -54°C

FDZ5047N

Trans MOSFET N-CH 30V 22A 36-Pin BGA T/R

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 22A

Current Rating: 22A

Drain to Source Breakdown Voltage: 30V

FDZ375P

P-Channel MOSFET, -20V, -3.7A, 78mΩ, Surface Mount

1 X 1 MM, ROHS COMPLIANT, ULTRA THIN, WL-CSP-4

Active

Continuous Drain Current (ID): 3.7A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 143mR

Drain to Source Voltage (Vdss): 20V

+25

FDZ299P

MOSFET P-CH 20V 4.6A BGA

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 4.6A

Current Rating: -4.6A

Drain to Source Breakdown Voltage: -20V

FDZ4010

Buffer/Inverter Based Peripheral Driver

Obsolete

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

FDZ201N

MOSFET 20V/12V NChannel BGa

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 9A

Current Rating: 9A

Drain to Source Breakdown Voltage: 20V

FDZ209N

Trans MOSFET N-CH 60V 4A 12-Pin BGA T/R

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 4A

Current Rating: 4A

Drain to Source Breakdown Voltage: 60V

FDZ294N

MOSFET N-CH 20V 6A 9-BGA

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 6A

Current Rating: 6A

Drain to Source Breakdown Voltage: 20V

FDZ201N_Q

MOSFET 20V/12V NChannel BGa

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 9A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 18mR

FDZ294N

Fairchild

Power Field-Effect Transistor, 6A I(D), 20V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-9

GRID ARRAY, R-PBGA-B9

Obsolete

Max Operating Temperature: 150

Number of Terminals: 9

Terminal Position: BOTTOM

Pin Count: 9

FDZ204P

Fairchild

Power Field-Effect Transistor, 4.5A I(D), 20V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-9

GRID ARRAY, S-PBGA-B9

Obsolete

Max Operating Temperature: 175

Number of Terminals: 9

Terminal Position: BOTTOM

Pin Count: 9

FDZ204P

Trans MOSFET P-CH 20V 4.5A 6-Pin BGA T/R

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 4.5A

Current Rating: -4.5A

Drain to Source Breakdown Voltage: -20V

FDZ206P

Trans MOSFET P-CH 20V 13A 18-Pin BGA T/R

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 13A

Current Rating: -13A

Drain to Source Breakdown Voltage: -20V

FDZ291P

MOSFET P-CH 20V 4.6A BGA

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 4.6A

Drain to Source Breakdown Voltage: -20V

Drain to Source Voltage (Vdss): 20V

+17

FDZ203N_Q

MOSFET 20V/12V NCh MOSFET

Obsolete

Continuous Drain Current (ID): 7.5A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 18mR

Fall Time: 11ns

FDZ206P

Fairchild

Power Field-Effect Transistor, 13A I(D), 20V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-30

GRID ARRAY, R-PBGA-B30

Obsolete

Max Operating Temperature: 175

Number of Terminals: 30

Terminal Position: BOTTOM

Pin Count: 30

FDZ191P

P-Channel JFET, -20V, -3A, 67mR, Surface Mount

0.65 MM HEIGHT, ULTRA THIN, BGA-6

Active

Continuous Drain Current (ID): 3A

Current Rating: -3A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 67mR

+28

FDZ208P

Trans MOSFET P-CH 30V 12.5A 18-Pin BGA T/R

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 12.5A

Current Rating: -12.5A

Drain to Source Breakdown Voltage: -30V

FDZ203N

MOSFET 20V/12V NCh MOSFET

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 7.5A

Current Rating: 7.5A

Drain to Source Breakdown Voltage: 20V

FDZ298N

MOSFET N-CH 20V 6A BGA

Obsolete

Package/Case: BGA

Continuous Drain Current (ID): 6A

Current Rating: 6A

Drain to Source Breakdown Voltage: 20V