Search Results for &quot; FQA16N50 &quot;

N-Channel MOSFET 500V 16A 200W Through Hole

Obsolete

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 320mR

Fairchild

Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN

TO-3PN, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Rochester Electronics

16A, 500V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN

TO-3PN, 3 PIN

Active

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Number of Elements: 1

FQA16N50-F109

MOSFET 500v QFET

Not Recommended for New Design

Continuous Drain Current (ID): 16A

Drain to Source Voltage (Vdss): 500V

Input Capacitance: 3nF

Max Operating Temperature: 150°C

Search Results for "FQA16N50"

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N-Channel MOSFET 500V 16A 200W Through Hole

Obsolete

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 320mR

Fairchild

Power Field-Effect Transistor, 16A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN

TO-3PN, 3 PIN

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Rochester Electronics

16A, 500V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN

TO-3PN, 3 PIN

Active

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Number of Elements: 1

FQA16N50-F109

MOSFET 500v QFET