Search Results for &quot; FQD24N08TM &quot;

MOSFET N-CH 80V 19.6A DPAK

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 19.6A

Current Rating: 19.6A

Drain to Source Breakdown Voltage: 80V

FQB24N08TM

MOSFET N-CH 80V 24A D2PAK

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 24A

Current Rating: 24A

Drain to Source Breakdown Voltage: 80V

MOSFET N-CH 80V 19.6A DPAK

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 19.6A

Current Rating: 19.6A

Drain to Source Breakdown Voltage: 80V

Fairchild

Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Obsolete

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-252

Search Results for "FQD24N08TM"

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FQD24N08TM

MOSFET N-CH 80V 19.6A DPAK

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 19.6A

Current Rating: 19.6A

Drain to Source Breakdown Voltage: 80V

FQB24N08TM

MOSFET N-CH 80V 24A D2PAK

Obsolete

Package/Case: TO-263-3

Continuous Drain Current (ID): 24A

Current Rating: 24A

Drain to Source Breakdown Voltage: 80V

MOSFET N-CH 80V 19.6A DPAK

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 19.6A

Current Rating: 19.6A

Drain to Source Breakdown Voltage: 80V

Fairchild

Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3