Search Results for &quot; IMF3956 &quot;

N-CHANNEL 30V 3.5A Surface Mount Power MOSFET

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 3.5A

Current Rating: 3.5A

Drain to Source Breakdown Voltage: 30V

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3.5A

Current Rating: 3.5A

Fall Time: 3ns

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 2

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

DMF3926-000

Mixer Diode, Low Barrier, S Band, Silicon, GREEN, DIE-4

GREEN, DIE-4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Pin Count: 4

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Continuous Drain Current (ID): 1.9A

RoHS Compliant: No

DMF3926-116

Microwave Mixer Diode,

Active

DMF3926-100

Mixer Diode, Low Barrier, C Band, Silicon, GREEN, CERAMIC PACKAGE-4

GREEN, CERAMIC PACKAGE-4

Obsolete

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Pin Count: 4

Search Results for "IMF3956"

Filters

N-CHANNEL 30V 3.5A Surface Mount Power MOSFET

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 3.5A

Current Rating: 3.5A

Drain to Source Breakdown Voltage: 30V

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

SMALL OUTLINE, R-PDSO-G8

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 3.5A

Current Rating: 3.5A

Fall Time: 3ns

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SO-8

Active

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,

SMALL OUTLINE, R-PDSO-G8

Active

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Number of Elements: 2

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

DMF3926-000

Mixer Diode, Low Barrier, S Band, Silicon, GREEN, DIE-4

GREEN, DIE-4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Pin Count: 4

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

SMALL OUTLINE, R-PDSO-G8

Transferred

Continuous Drain Current (ID): 1.9A

RoHS Compliant: No

DMF3926-116

Microwave Mixer Diode,

Active

DMF3926-100

Mixer Diode, Low Barrier, C Band, Silicon, GREEN, CERAMIC PACKAGE-4