Search Results for &quot; IRF5M3710 &quot;

Trans MOSFET N-CH Si 100V 35A 3-Pin(3+Tab) TO-254AA

Volume Production

Package/Case: TO-254AA

Continuous Drain Current (ID): 35A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 30mR

Infineon

Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

HERMETIC SEALED PACKAGE-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-254AA

IRF5M3710SCX

Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-254AA

Volume Production

Continuous Drain Current (ID): 35A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRF5M3710SCV

Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-254AA

Volume Production

Continuous Drain Current (ID): 35A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRF5M3710SCXB

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Unknown

IRF5M3710SCXB/LEADFORM

100V 35.000A HEXFET

Unknown

Search Results for "IRF5M3710"

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Trans MOSFET N-CH Si 100V 35A 3-Pin(3+Tab) TO-254AA

Volume Production

Package/Case: TO-254AA

Continuous Drain Current (ID): 35A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 30mR

Infineon

Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

HERMETIC SEALED PACKAGE-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-254AA

IRF5M3710SCX

Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-254AA