Search Results for &quot; IRF8910GTRPBF &quot;

Trans MOSFET N-CH 20V 10A 8-Pin SOIC T/R

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 13.4mR

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Active

Max Operating Temperature: 150

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Package/Case: SOIC

Continuous Drain Current (ID): 10A

Current Rating: 10A

Drain to Source Voltage (Vdss): 20V

Search Results for "IRF8910GTRPBF"

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Trans MOSFET N-CH 20V 10A 8-Pin SOIC T/R

Volume Production

Package/Case: SO

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 13.4mR

Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

SMALL OUTLINE, R-PDSO-G8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Active

Max Operating Temperature: 150

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,