Search Results for &quot; IRFI3306GPBF &quot;

60V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package, TO-220-3 FP, RoHS

Volume Production

Package/Case: TO-220

Continuous Drain Current (ID): 71A

Drain to Source Voltage (Vdss): 60V

Max Operating Temperature: 175°C

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Not Recommended

Max Operating Temperature: 175

Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 160A

Drain to Source Voltage (Vdss): 60V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

Not Recommended

Max Operating Temperature: 175

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-220AB

Search Results for "IRFI3306GPBF"

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60V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package, TO-220-3 FP, RoHS

Volume Production

Package/Case: TO-220

Continuous Drain Current (ID): 71A

Drain to Source Voltage (Vdss): 60V

Max Operating Temperature: 175°C

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Not Recommended

Max Operating Temperature: 175

Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 160A

Drain to Source Voltage (Vdss): 60V

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3