Search Results for "IXFA10N80P"

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Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3

Datasheet

PLASTIC PACKAGE-3

Transferred

Package/Case: TO-263

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.1R

IXFA10N80P

Littelfuse

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3

Datasheet

SMALL OUTLINE, R-PSSO-G3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-263AA

IXFA10N80P-TRL

Ixys

Power Field-Effect Transistor,

Datasheet

Active

Search Results for "IXFA10N80P"

Filters

IXFA10N80P

Ixys

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3

Datasheet

PLASTIC PACKAGE-3

Transferred

Package/Case: TO-263

Continuous Drain Current (ID): 10A

Drain to Source Breakdown Voltage: 800V

Drain to Source Resistance: 1.1R

IXFA10N80P

Littelfuse

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3

Datasheet

SMALL OUTLINE, R-PSSO-G3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-263AA

IXFA10N80P-TRL

Ixys

Power Field-Effect Transistor,

Datasheet

Active