Search Results for &quot; IXFL32N120P &quot;

MOSFET N-CH 1200V 24A I5-PAK

Volume Production

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 340mR

Drain to Source Voltage (Vdss): 1.2kV

Power Field-Effect Transistor, 24A I(D), 1200V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I5PAK-3

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 32A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 310mR

Power Field-Effect Transistor, 18A I(D), 1200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I5PAK-3

PLASTIC, ISOPLUS, I5PAK-3

Transferred

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 380mR

Drain to Source Voltage (Vdss): 1.2kV

Power Field-Effect Transistor, 18A I(D), 1200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I5PAK-3

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

FLANGE MOUNT, R-PUFM-X4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: UPPER

Number of Elements: 1

Search Results for "IXFL32N120P"

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MOSFET N-CH 1200V 24A I5-PAK

Volume Production

Continuous Drain Current (ID): 24A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 340mR

Drain to Source Voltage (Vdss): 1.2kV

Power Field-Effect Transistor, 24A I(D), 1200V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I5PAK-3

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

MINIBLOC-4

Transferred

Package/Case: SOT-227-4

Continuous Drain Current (ID): 32A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 310mR

Power Field-Effect Transistor, 18A I(D), 1200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I5PAK-3

PLASTIC, ISOPLUS, I5PAK-3

Transferred

Continuous Drain Current (ID): 18A

Drain to Source Breakdown Voltage: 1.2kV

Drain to Source Resistance: 380mR

Drain to Source Voltage (Vdss): 1.2kV

Power Field-Effect Transistor, 18A I(D), 1200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I5PAK-3

IN-LINE, R-PSIP-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Number of Elements: 1

Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4