Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 310mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 21nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1kW |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Radiation Hardening | No |
| Rds On Max | 310mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
| Turn-Off Delay Time | 88ns |
| RoHS | Compliant |
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