Ixys
IXFN32N120P
Power Field-Effect Transistor, 32A I(D), 1200V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power830W
Quick Jump:
Technical Specifications
Ixys IXFN32N120P technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
32A
Drain to Source Breakdown Voltage
1.2kV
Drain to Source Resistance
310mR
Drain to Source Voltage (Vdss)
1.2kV
Fall Time
48ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
21nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1kW
Mount
Chassis Mount, Screw
Number of Elements
1
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
830W
Radiation Hardening
No
Rds On Max
310mR
RoHS Compliant
Yes
Series
Polar™
Turn-Off Delay Time
88ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN32N120P Datasheet
Download the complete datasheet for Ixys IXFN32N120P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
