Search Results for &quot; IXFV96N20P &quot;

Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) PLUS 220

Obsolete

Package/Case: TO-220-3

Continuous Drain Current (ID): 96A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 24mR

200V 96A N-Channel MOSFET TO-247 24mR RdsOn

TO-247, 3 PIN

Transferred

Package/Case: TO-247

Continuous Drain Current (ID): 96A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 24mR

Power Field-Effect Transistor, 96A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

TO-268, 3 PIN

Transferred

Package/Case: TO-268

Continuous Drain Current (ID): 96A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 24mR

Power Field-Effect Transistor, 96A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-268AA

Power Field-Effect Transistor, 96A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN

FLANGE MOUNT, R-PSFM-T3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-247AD

Search Results for "IXFV96N20P"

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IXFV96N20P

Trans MOSFET N-CH 200V 96A 3-Pin(3+Tab) PLUS 220

Obsolete

Package/Case: TO-220-3

Continuous Drain Current (ID): 96A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 24mR

200V 96A N-Channel MOSFET TO-247 24mR RdsOn

TO-247, 3 PIN

Transferred

Package/Case: TO-247

Continuous Drain Current (ID): 96A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 24mR

Power Field-Effect Transistor, 96A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

TO-268, 3 PIN

Transferred

Package/Case: TO-268

Continuous Drain Current (ID): 96A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 24mR

Power Field-Effect Transistor, 96A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

SMALL OUTLINE, R-PSSO-G2

Active

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-268AA

Power Field-Effect Transistor, 96A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN