IXFH96N20P

200V 96A N-Channel MOSFET TO-247 24mR RdsOn

N-Channel Power MOSFET, 200V Drain-Source Breakdown Voltage, 96A Continuous Drain Current, and 24mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-247 package for through-hole mounting, offering a maximum power dissipation of 600W and an operating temperature range of -55°C to 175°C. Key switching characteristics include a 28ns turn-on delay, 30ns fall time, and 75ns turn-off delay, with an input capacitance of 4.8nF. This RoHS compliant component is designed for high-performance power applications.

PackageTO-247

MountingThrough Hole

PolarityN-CHANNEL

Power600W

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Technical Specifications

Ixys IXFH96N20P technical specifications.

General

Package/Case	TO-247
Continuous Drain Current (ID)	96A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	24mR
Drain to Source Voltage (Vdss)	200V
Drain-source On Resistance-Max	24MR
Fall Time	30ns
Gate to Source Voltage (Vgs)	20V
Height	21.46mm
Input Capacitance	4.8nF
Lead Free	Lead Free
Length	16.26mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	600W
Mount	Through Hole
Package Quantity	30
Packaging	Box
Polarity	N-CHANNEL
Power Dissipation	600W
Rds On Max	24mR
RoHS Compliant	Yes
Series	PolarHT™ HiPerFET™
Turn-Off Delay Time	75ns
Turn-On Delay Time	28ns
Width	5.3mm