Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
600V 20A N-Channel MOSFET TO-247AD 350mR
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-204AE, TO-204AE, 2 PIN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Power Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
