N-Channel Silicon Metal-Oxide Semiconductor FET, a power field-effect transistor featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 20A. This component offers a low drain-source on-resistance of 350mΩ, a maximum power dissipation of 300W, and operates within a temperature range of -55°C to 150°C. It is packaged in a TO-247AD through-hole mount and includes a 4.5nF input capacitance with a 40ns fall time and 70ns turn-off delay.
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Ixys IXTH20N60 technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 350mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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