Search Results for &quot; IXTP200N055T2 &quot;

N-CHANNEL TrenchT2 MOSFET, 55V, 200A, TO-220AB, -55°C to 175°C

TO-220, 3 PIN

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 200A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 4.2mR

Power Field-Effect Transistor,

Active

55V 260A TO-220AB TrenchT2 MOSFET

FLANGE MOUNT, R-PSFM-T3

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 260A

Drain to Source Voltage (Vdss): 55V

Input Capacitance: 10.8nF

N-CHANNEL MOSFET 55V 200A 4.2mR 360W TO-263

TO-263, 3 PIN

Transferred

Package/Case: TO-263

Continuous Drain Current (ID): 200A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 4.2mR

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor,

Active

Search Results for "IXTP200N055T2"

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N-CHANNEL TrenchT2 MOSFET, 55V, 200A, TO-220AB, -55°C to 175°C

TO-220, 3 PIN

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 200A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 4.2mR

Power Field-Effect Transistor,

Active

55V 260A TO-220AB TrenchT2 MOSFET

FLANGE MOUNT, R-PSFM-T3

Transferred

Package/Case: TO-220AB

Continuous Drain Current (ID): 260A

Drain to Source Voltage (Vdss): 55V

Input Capacitance: 10.8nF

N-CHANNEL MOSFET 55V 200A 4.2mR 360W TO-263

TO-263, 3 PIN

Transferred

Package/Case: TO-263

Continuous Drain Current (ID): 200A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 4.2mR

Power Field-Effect Transistor,

Active

Power Field-Effect Transistor,