The IXTA200N055T2 is an N-channel MOSFET with a drain to source breakdown voltage of 55V and a continuous drain current of 200A. It features a drain to source resistance of 4.2mR and a maximum power dissipation of 360W. The device is packaged in a TO-263 package and is suitable for surface mount applications. It operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power360W
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Technical Specifications
Ixys IXTA200N055T2 technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 4.2mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ |
| Turn-Off Delay Time | 49ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA200N055T2 Datasheet
Download the complete datasheet for Ixys IXTA200N055T2 to view detailed technical specifications.
No datasheet is available for this part.