Power Field-Effect Transistor, 6A I(D), 1200V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Power Field-Effect Transistor,
N-CHANNEL MOSFET, 1.2kV, 6A, 300W, TO-247-3, Through Hole
