Ixys
IXTT6N120
Power Field-Effect Transistor, 6A I(D), 1200V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Power Field-Effect Transistor, 6A I(D), 1200V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
PackageTO-268
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXTT6N120 technical specifications.
General
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 2.4R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 2.6MR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.95nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 2.6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTT6N120 Datasheet
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