
Power Field-Effect Transistor, 6A I(D), 1200V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Sign in to ask questions about the Ixys IXTT6N120 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXTT6N120 technical specifications.
| Package/Case | TO-268 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 2.4R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 2.6MR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.95nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 2.6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 42ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTT6N120 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
