Search Results for "IXUC200N055"

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Power Field-Effect Transistor, 200A I(D), 55V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN

IN-LINE, R-PSIP-T3

Transferred

Continuous Drain Current (ID): 200A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 5.1mR

Drain to Source Voltage (Vdss): 55V

N-CHANNEL MOSFET 55V 100A 7.7mR 150W 3-Pin ISOPLUS 220

ISOPLUS 220, TO-273, 3 PIN

End Of Life

Continuous Drain Current (ID): 100A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 7.7mR

Drain to Source Voltage (Vdss): 55V

Power Field-Effect Transistor, 200A I(D), 55V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN

IN-LINE, R-PSIP-T3

Transferred

Continuous Drain Current (ID): 200A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 5.1mR

Drain to Source Voltage (Vdss): 55V

N-CHANNEL MOSFET 55V 100A 7.7mR 150W 3-Pin ISOPLUS 220

ISOPLUS 220, TO-273, 3 PIN

End Of Life

Continuous Drain Current (ID): 100A

Drain to Source Breakdown Voltage: 55V

Drain to Source Resistance: 7.7mR

Drain to Source Voltage (Vdss): 55V