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Insulated Gate Bipolar Transistor,

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 650V

Collector Emitter Saturation Voltage: 1.8V

Collector-emitter Voltage-Max: 2.3V

Insulated Gate Bipolar Transistor,

Active

IGBT 650V 170A 750W TO247

Volume Production

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 650V

Collector Emitter Saturation Voltage: 1.8V

Collector-emitter Voltage-Max: 2.3V

IGBT 650V 60A 270W TO247

Volume Production

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 650V

Collector Emitter Saturation Voltage: 2.35V

Collector-emitter Voltage-Max: 2.7V

Insulated Gate Bipolar Transistor,

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 650V

Collector Emitter Saturation Voltage: 1.74V

Collector-emitter Voltage-Max: 2.1V

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel,

Transferred

Package/Case: TO-247-3

Collector Emitter Breakdown Voltage: 650V

Collector Emitter Saturation Voltage: 1.85V

Collector Emitter Voltage (VCEO): 650V

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor,

Active

Insulated Gate Bipolar Transistor,

Active