RF Power Field-Effect Transistor
RF POWER, FET
RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
FUSE 2A 250V FAST SHORT MRF
FUSE 200MA 250V FAST SHORT MRF
Rotary Switch DP6T, 2P, 100mA, 28V, TH, Solder, Illuminated
RF Small Signal Bipolar Transistor, 1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39
RF MOSFET Transistor, N-CH, 65V, 26A, 4-Pin
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 333-04, 6 PIN
RF FET, 2-Element, N-Channel, 4-Pin, UHF
FUSE BOARD MOUNT 2A 250VAC RAD
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391VAR
2.4GHz RF Transceiver, SPI, 3.3V, QFN, 625Kbps
TRANSISTOR,MOSFET,N-CHANNEL,65V V(BR)DSS,SOT-391B
Receiver Module 155Mbps
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880, CASE 465B-02, 2 PIN
2.4GHz Telecom IC, SPI, QFN, 625Kbps, 3.3V, 0dBm
2.4GHz Telecom IC Module, 250Kbps, SPI, 19dBm Output
