Search Results for &quot; MRF7S19080HSR3 &quot;

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLATPACK, R-CDFP-F2

Obsolete

Drain to Source Voltage (Vdss): 65V

Frequency: 1.99GHz

Gain: 18dB

Gate to Source Voltage (Vgs): 10V

Freescale Semiconductor

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V

FLATPACK, R-CDFP-F2

Transferred

Max Operating Temperature: 225

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

MRF7S19080HR3

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLANGE MOUNT, R-CDFM-F2

Obsolete

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 1.99GHz

Gain: 18dB

MRF7S19080HSR5

65V 24W Lead Free RF Amplifier, 18dB Gain, 1.99GHz Frequency

Obsolete

Frequency: 1.99GHz

Gain: 18dB

Lead Free: Lead Free

Output Power: 24W

Search Results for "MRF7S19080HSR3"

Filters

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLATPACK, R-CDFP-F2

Obsolete

Drain to Source Voltage (Vdss): 65V

Frequency: 1.99GHz

Gain: 18dB

Gate to Source Voltage (Vgs): 10V

Freescale Semiconductor

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 24 W Avg., 28 V

FLATPACK, R-CDFP-F2

Transferred

Max Operating Temperature: 225

Number of Terminals: 2

Terminal Position: DUAL

Pin Count: 2

MRF7S19080HR3

L BAND, Si, N-CHANNEL, RF POWER, MOSFET

FLANGE MOUNT, R-CDFM-F2

Obsolete

Drain to Source Breakdown Voltage: 65V

Drain to Source Voltage (Vdss): 65V

Frequency: 1.99GHz

Gain: 18dB

MRF7S19080HSR5

65V 24W Lead Free RF Amplifier, 18dB Gain, 1.99GHz Frequency