Rectifier Diode, Schottky, 1 Phase, 1 Element, 109A, 1200V V(RRM), Silicon Carbide, TO-247
Rectifier Diode, Schottky, 1 Phase, 1 Element, 88A, 700V V(RRM), Silicon Carbide, TO-268AA
Rectifier Diode, Schottky, 1 Phase, 1 Element, 88A, 700V V(RRM), Silicon Carbide, TO-247
Rectifier Diode, Schottky, 1 Phase, 2 Element, 44A, 700V V(RRM), Silicon Carbide, TO-247
Rectifier Diode
Rectifier Diode, Schottky, 1 Phase, 1 Element, 60A, 700V V(RRM), Silicon Carbide, TO-247
Rectifier Diode, Schottky, 1 Phase, 1 Element, 65A, 1200V V(RRM), Silicon Carbide, TO-247
Power Field-Effect Transistor, 25A I(D), 700V, 0.115ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268
Rectifier Diode, Schottky, 1 Phase, 1 Element, 39A, 1200V V(RRM), Silicon Carbide, TO-247
Rectifier Diode, Schottky, 1 Phase, 1 Element, 31A, 1700V V(RRM), Silicon Carbide, TO-247
Rectifier Diode,
Power Field-Effect Transistor, 65A I(D), 700V, 0.044ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA
Power Field-Effect Transistor, 77A I(D), 700V, 0.044ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
Power Field-Effect Transistor, 126A I(D), 700V, 0.019ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA
SiC MOSFET, 700V, 140A, 0.019Ω, N-Ch, TO-247
Rectifier Diode, Schottky, 1 Phase, 2 Element, 32.5A, 1200V V(RRM), Silicon Carbide, TO-247
Combiner, 5MHz Min, 1500MHz Max, 1.1dB Insertion Loss-Max, CASE A03, 8 PIN
Combiner, 0.1MHz Min, 450MHz Max, 1dB Insertion Loss-Max, CASE A03, 8 PIN
Combiner, 50MHz Min, 750MHz Max, 1.5dB Insertion Loss-Max, CASE A03, 8 PIN
