Search Results for &quot; MUBW35-12A7 &quot;

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

MODULE-24

Transferred

Package/Case: E

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Collector-emitter Voltage-Max: 3.1V

Littelfuse

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

FLANGE MOUNT, R-XUFM-X24

Active

Max Operating Temperature: 125

Number of Terminals: 24

Terminal Position: UPPER

Number of Elements: 7

MUBW35-12E7

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

FLANGE MOUNT, R-XUFM-X20

Obsolete

Package/Case: E

Collector Emitter Breakdown Voltage: 1.2kV

Collector-emitter Voltage-Max: 2.8V

Input: Three Phase Bridge Rectifier

MUBW35-12A8

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

MODULE-24

Transferred

Package/Case: E

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Collector-emitter Voltage-Max: 3.1V

Search Results for "MUBW35-12A7"

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Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

MODULE-24

Transferred

Package/Case: E

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Collector-emitter Voltage-Max: 3.1V

Littelfuse

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

FLANGE MOUNT, R-XUFM-X24

Active

Max Operating Temperature: 125

Number of Terminals: 24

Terminal Position: UPPER

Number of Elements: 7

MUBW35-12E7

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

FLANGE MOUNT, R-XUFM-X20

Obsolete

Package/Case: E

Collector Emitter Breakdown Voltage: 1.2kV

Collector-emitter Voltage-Max: 2.8V

Input: Three Phase Bridge Rectifier

MUBW35-12A8

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24