Search Results for &quot; NDC652P &quot;

MOSFET P-CH 30V 2.4A SSOT6

Obsolete

Package/Case: SOT-23-6

Continuous Drain Current (ID): 2.4A

Current Rating: -2.4A

Drain to Source Breakdown Voltage: -30V

Fairchild

Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

SMALL OUTLINE, R-PDSO-G6

Obsolete

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Pin Count: 6

NDC652P_F095

MOSFET -30V 2.4A P-CH ENHANCEMENT MODE

Obsolete

Continuous Drain Current (ID): 2.4A

Drain to Source Breakdown Voltage: 30V

Fall Time: 26ns

Gate to Source Voltage (Vgs): 20V

NDC652P_Q

P-CHANNEL MOSFET N-Channel 30V -2.4A 1.6W Tape and Reel

Obsolete

Continuous Drain Current (ID): -2.4A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 180mR

Fall Time: 26ns

NDC652PTR

Volume Production

NDC652P_NF073

Unknown

RoHS Compliant: Yes

Search Results for "NDC652P"

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MOSFET P-CH 30V 2.4A SSOT6

Obsolete

Package/Case: SOT-23-6

Continuous Drain Current (ID): 2.4A

Current Rating: -2.4A

Drain to Source Breakdown Voltage: -30V

Fairchild

Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

SMALL OUTLINE, R-PDSO-G6

Obsolete

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Pin Count: 6

NDC652P_F095

MOSFET -30V 2.4A P-CH ENHANCEMENT MODE

Obsolete

Continuous Drain Current (ID): 2.4A

Drain to Source Breakdown Voltage: 30V

Fall Time: 26ns

Gate to Source Voltage (Vgs): 20V

NDC652P_Q

P-CHANNEL MOSFET N-Channel 30V -2.4A 1.6W Tape and Reel