Power Field-Effect Transistor, 9A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257AA, 3 PIN
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.05ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16
Open Common Mode EMI Suppression Inductors
MOSFET DRVR 8A 1-OUT 10-Pin SIP
