Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-251, TO-251, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-252, TO-252, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-252, TO-252, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-251, VPAK-3
Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202, TO-202, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-251, TO-251, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 3800mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-252, TO-252, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202, TO-202, 3 PIN
Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-202, TO-202, 3 PIN
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
