1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 100 to 250, SOT-223 (TO-261) 4 LEAD, 4000-REEL
NPN Bipolar Transistor hFE 40 to 250, SOT-223 (TO-261) 4 LEAD, 1000-REEL
1.0 A, 80 V NPN Bipolar Junction Transistor hFE = 63 to 160, SOT-223 (TO-261) 4 LEAD, 1000-REEL
PNP BJT 80V 1.5A 50MHz SOT-223 Transistor
PNP BJT 80V 1.5A 50MHz SOT-223-4 Transistor
PNP 80 V Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
PNP 80 V Bipolar Transistor, 4000-REEL
1A, 80V, NPN, Si, POWER TRANSISTOR, TO-261AA, CASE 318E-04, 4 PIN
Si, SMALL SIGNAL TRANSISTOR, CASE 318E-04, 4 PIN
NPN Bipolar Transistor, SOT-223 (TO-261) 4 LEAD, 1000-REEL
Inductor Wirewound 1.5uH 20% 10KHz 2.85A 0.024Ohm DCR RDL Bulk
Inductor Wirewound 390uH 10% 10KHz 0.25A 2Ohm DCR RDL Bulk
Inductor Wirewound 330uH 10% 10KHz 0.27A 1.8Ohm DCR RDL Bulk
Power Choke Wirewound 4.7uH 20% 10KHz 4.1A 0.03Ohm DCR RDL T/R
Power Choke Wirewound 4.7uH 20% 10KHz 3.3A 0.04Ohm DCR RDL T/R
Power Choke Wirewound 6.8uH 20% 10KHz 3.3A 0.05Ohm DCR RDL T/R
Power Choke Wirewound 33uH 20% 10KHz 2.1A 0.09Ohm DCR RDL T/R
Power Choke Wirewound 68uH 10% 10KHz 1.7A 0.16Ohm DCR RDL T/R
Power Choke Wirewound 1.5uH 30% 10KHz 4.2A 0.02Ohm DCR RDL T/R
