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NPN Phototransistor, 35V VCEO, 860nm, 7us Fall Time, Through Hole

Volume Production

Package/Case: T

Collector Emitter Breakdown Voltage: 35V

Collector Emitter Saturation Voltage: 200mV

Collector Emitter Voltage (VCEO): 35V

Photo Transistor, 860nm

Obsolete

Max Operating Temperature: 100

Min Operating Temperature: -55

Number of Functions: 1

NPN Phototransistor, 35V VCEO, 15mA IC, 860nm, Through Hole

Volume Production

Package/Case: T

Collector Emitter Breakdown Voltage: 35V

Collector Emitter Saturation Voltage: 200mV

Collector Emitter Voltage (VCEO): 35V

NPN Phototransistor 860nm 35V 15mA Through Hole

Volume Production

Package/Case: T

Collector Emitter Breakdown Voltage: 35V

Collector Emitter Saturation Voltage: 200mV

Collector Emitter Voltage (VCEO): 35V

Phototransistor IR Chip Silicon 900nm 2-Pin T-1

T-1

Active

Phototransistor Type: Phototransistor

Type: IR Chip

Polarity: NPN

Half Intensity Angle Degrees: 24°