Search Results for &quot; SFM9110TF &quot;

P-Channel MOSFET, -100V, 1.2R, 1A, SOT-223-4

Obsolete

Package/Case: SOT-223-4

Continuous Drain Current (ID): 1A

Drain to Source Breakdown Voltage: -100V

Drain to Source Resistance: 1.2R

P-CHANNEL MOSFET, 100V, 2.8A, TO-252-3, Surface Mount

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 2.8A

Drain to Source Breakdown Voltage: -100V

Drain to Source Resistance: 1.2R

Fairchild

Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

DPAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-252

Rochester Electronics

Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

SMALL OUTLINE, R-PSSO-G2

Contact Manufacturer

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-252

Pin Count: 3

Search Results for "SFM9110TF"

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SFM9110TF

P-Channel MOSFET, -100V, 1.2R, 1A, SOT-223-4

Obsolete

Package/Case: SOT-223-4

Continuous Drain Current (ID): 1A

Drain to Source Breakdown Voltage: -100V

Drain to Source Resistance: 1.2R

P-CHANNEL MOSFET, 100V, 2.8A, TO-252-3, Surface Mount

Obsolete

Package/Case: TO-252-3

Continuous Drain Current (ID): 2.8A

Drain to Source Breakdown Voltage: -100V

Drain to Source Resistance: 1.2R

Fairchild

Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

DPAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 2

Terminal Position: SINGLE

JEDEC Package Code: TO-252

Rochester Electronics

Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3