Search Results for "SKIIP21NEB063T1"

Insulated Gate Bipolar Transistor, 118A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP-18

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 2, 42 PIN

AC Motor Controller, 23A, CASE M3 MODULE

Insulated Gate Bipolar Transistor,

Trans IGBT Module 600V 43A 25-Pin

Trans IGBT Module N-CH 1.2KV 52A 19-Pin

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 1, 42 PIN

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, CASE M2, MINISKIIP-30

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 2, 42 PIN

Insulated Gate Bipolar Transistor

Half Bridge Based Peripheral Driver, 2500A

IGBT MODULE, SIX, 1.2KV, 33A; Transistor Polarity:Six NPN; DC Collector Current:33A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

Insulated Gate Bipolar Transistor, 56A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 2, 42 PIN

Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel,

Half Bridge Based Peripheral Driver, 0.05A,

Half Bridge Based Peripheral Driver, 0.05A,

Half Bridge Based Peripheral Driver, 2000A

IGBT, MODULE, 1.2KV, 47A; DC Collector Current:47A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Operating Temperature Max:175°C; Packaging:Each ;RoHS Compliant: Yes

IGBT, MODULE, 1.2KV, 37A; DC Collector Current:37A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Operating Temperature Max:175°C; Packaging:Each ;RoHS Compliant: Yes

IGBT, MODULE, 1.2KV, 118A, MINISKIIP-2; Transistor Polarity:-; DC Collector Current:118A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes