Trans IGBT Module N-CH 1200V 159A 7-Pin
IGBT MODULE, 600V, 130A, SEMITRANS 2
Transistor,
Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, CASE D 93, SEMITRANS 2N, 7 PIN
SEMITRANS
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, SEMITRANS 3, 7 PIN
Analog Circuit
Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, CASE D15, SEMITRANS-4
Power Field-Effect Transistor, 180A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE D 15, SEMITRANS M1, 4 PIN
Trans IGBT Module N-CH 1200V 231A 7-Pin
IGBT module SEMITRANS 2 1200 V, SKM195GB126D, Semikron
Trans IGBT Module N-CH 1200V 235A 7-Pin
Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, CASE D 56, SEMITRANS 3, 7 PIN
Insulated Gate Bipolar Transistor, 265A I(C), 600V V(BR)CES, N-Channel, CASE D 61, SEMITRANS 2, 7 PIN
Trans IGBT Module N-CH 1200V 225A 5-Pin
Trans IGBT Module N-CH 600V 195A 7-Pin Case D-61
Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel, CASE D61, SEMITRANS 2, 7 PIN
IGBT MODULE, 1.2KV, 190A, SEMITRANS 2; Transistor Polarity:N Channel; DC Collector Current:190A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes
