The EPC2052 is a 100 V, 13.5 mΩ enhancement-mode gallium nitride (eGaN) power transistor designed for high-efficiency power conversion. It features a compact 1.5 mm x 1.5 mm die footprint and zero reverse recovery (QRR) charge. This FET is optimized for high-frequency switching applications including 48 V servers, LiDAR, motor drives, Class-D audio, and LED lighting. It is supplied in a passivated die form with solder bumps, offering high power density and superior thermal performance.
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EPC (Efficient Power Conversion) EPC2052 technical specifications.
| Drain-to-Source Voltage (VDS) | 100V |
| Drain-to-Source Resistance (RDS(on)) | 13.5mΩ |
| Continuous Drain Current (ID) | 8.2A |
| Pulsed Drain Current (ID, pulsed) | 74A |
| Gate-to-Source Voltage (VGS) | -4 to 6V |
| Total Gate Charge (QG) | 4.5nC |
| Reverse Recovery Charge (QRR) | 0nC |
| Input Capacitance (CISS) | 441pF |
| Output Capacitance (COSS) | 195pF |
| Operating Temperature (TJ) | -40 to 150°C |
| Thermal Resistance, Junction-to-Case (RθJC) | 2°C/W |
| Die Size | 1.5 x 1.5mm |
| RoHS | Compliant (RoHS 3) |
| REACH | Compliant (REACH Unaffected) |
| Halogen-free | Yes |
Download the complete datasheet for EPC (Efficient Power Conversion) EPC2052 to view detailed technical specifications.
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