EPC (Efficient Power Conversion)
EPC2052
EPC2052 - 100 V, 13.5 mΩ, 8.2 A Enhancement Mode GaN Power Transistor
The EPC2052 is a 100 V, 13.5 mΩ enhancement-mode gallium nitride (eGaN) power transistor designed for high-efficiency power conversion. It features a compact 1.5 mm x 1.5 mm die footprint and zero reverse recovery (QRR) charge. This FET is optimized for high-frequency switching applications including 48 V servers, LiDAR, motor drives, Class-D audio, and LED lighting. It is supplied in a passivated die form with solder bumps, offering high power density and superior thermal performance.
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Technical Specifications
EPC (Efficient Power Conversion) EPC2052 technical specifications.
General
| Drain-to-Source Voltage (VDS) | 100V |
| Drain-to-Source Resistance (RDS(on)) | 13.5mΩ |
| Continuous Drain Current (ID) | 8.2A |
| Pulsed Drain Current (ID, pulsed) | 74A |
| Gate-to-Source Voltage (VGS) | -4 to 6V |
| Total Gate Charge (QG) | 4.5nC |
| Reverse Recovery Charge (QRR) | 0nC |
| Input Capacitance (CISS) | 441pF |
| Output Capacitance (COSS) | 195pF |
| Operating Temperature (TJ) | -40 to 150°C |
| Thermal Resistance, Junction-to-Case (RθJC) | 2°C/W |
| Die Size | 1.5 x 1.5mm |
Compliance
| RoHS | Compliant (RoHS 3) |
| REACH | Compliant (REACH Unaffected) |
| Halogen-free | Yes |
Datasheet
EPC (Efficient Power Conversion) EPC2052 Datasheet
Download the complete datasheet for EPC (Efficient Power Conversion) EPC2052 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.