The EPC90123 is a half-bridge evaluation board featuring the 100 V rated EPC2218 GaN field effect transistor (FET). It is designed to simplify the evaluation process of the EPC2218 by including all critical components, such as the uPI Semiconductor uP1966E gate driver and an EPC2038 GaN FET to augment the bootstrap supply, on a single 2-inch by 2-inch board. The layout is optimized for high switching performance and includes probe points for waveform measurement and efficiency calculation.
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Technical Specifications
EPC EPC90123 technical specifications.
General
| Maximum Bus Input Voltage (VIN) | 80V |
| Gate Drive Regulator Supply Range (VDD) | 7.5 - 12V |
| Switch Node Output Current (IOUT) | 25A |
| PWM Logic Input Voltage Threshold (High) | 3.5 - 5.5V |
| Minimum PWM High State Pulse Width | 50ns |
| Drain-Source Voltage (VDS) of FET | 100V |
| Board Size | 2 x 2inch |
Compliance
| RoHS | Compliant |
Datasheet
EPC EPC90123 Datasheet
Download the complete datasheet for EPC EPC90123 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.