EPC Space FSMD-B series of eGaN power switching HEMTs are specifically designed for critical applications in space and high-reliability environments. The lateral structure of the die provides low gate charge (QG) and fast switching times, enabling higher power densities and efficiency in compact packaging. The device is radiation hardened including TID (LDR and HDR) immunity and SEE hardening up to 83.7 MeV/mg/cm2.
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Technical Specifications
EPC FBG10N30BC technical specifications.
General
| Drain-Source Voltage (VDS) | 100V |
| Drain-Source Resistance (RDS(on) max) | 16.0mΩ |
| Continuous Drain Current (ID) | 30A |
| Gate Charge (QG max) | 11nC |
| Pulsed Drain Current (IDM) | 120A |
| Thermal Resistance, Junction-to-Case (RϴJC) | 2.25°C/W |
| Package Size | 5.7 x 3.9mm |
Compliance
| Radiation Hardness | SEE immunity for LET of 83.7 MeV/mg/cm2 |
| Export Classification | EAR99 / ECCN 9A515.e |
| Itar | Not ITAR Controlled |
Datasheet
EPC FBG10N30BC Datasheet
Download the complete datasheet for EPC FBG10N30BC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.