N-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 5A continuous drain current. This dual dual drain device offers a low 30mOhm drain-source resistance at 4V gate-source voltage. Housed in an 8-pin SO package with gull-wing leads for surface mounting, it provides a maximum power dissipation of 2000mW and operates across a temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Etronic Team S SM5N20 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SO |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.98(Max) |
| Package Width (mm) | 3.99(Max) |
| Package Height (mm) | 1.75(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 5A |
| Maximum Drain Source Resistance | 30@4VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 910@8VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Etronic Team S SM5N20 Datasheet
Download the complete datasheet for Etronic Team S SM5N20 to view detailed technical specifications.
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