Dual N/P-channel enhancement mode power MOSFETs with a 30V drain-source voltage rating. Features a maximum continuous drain current of 7A for the N-channel and 5A for the P-channel. Offered in an 8-pin SO package with gull-wing leads for surface mounting, boasting low on-resistance of 25mOhm (N-channel) and 45mOhm (P-channel) at 10V Vgs. Typical gate charge values are 19.1nC (N-channel) and 18nC (P-channel) at 10V Vgs, with input capacitance of 905pF (N-channel) and 676pF (P-channel) at 15V Vds. Maximum power dissipation is 2000mW, operating across a temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Etronic Team S TM8403 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SO |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.98(Max) |
| Package Width (mm) | 3.99(Max) |
| Package Height (mm) | 1.75(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7@N Channel|5@P ChannelA |
| Maximum Drain Source Resistance | 25@10V@N Channel|45@10V@P ChannelmOhm |
| Typical Gate Charge @ Vgs | 19.1@10V|[email protected]@N Channel|18@10V|[email protected]@P ChannelnC |
| Typical Gate Charge @ 10V | 19.1@N Channel|18@P ChannelnC |
| Typical Input Capacitance @ Vds | 905@15V@N Channel|676@15V@P ChannelpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Etronic Team S TM8403 Datasheet
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