P-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 40A continuous drain current. This single-element transistor is housed in a TO-252AA DPAK surface-mount package with gull-wing leads, offering a maximum power dissipation of 50000mW. Key electrical characteristics include a low 19mOhm drain-source on-resistance at 10V gate-source voltage and typical gate charge values of 33.5nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Etronic Team SSD4030P technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6(Max)
Package Width (mm)
6.2(Max)
Package Height (mm)
2.35(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
40A
Maximum Drain Source Resistance
19@10VmOhm
Typical Gate Charge @ Vgs
33.5@10V|[email protected]nC
Typical Gate Charge @ 10V
33.5nC
Typical Input Capacitance @ Vds
1200@15VpF
Maximum Power Dissipation
50000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Etronic Team SSD4030P Datasheet
Download the complete datasheet for Etronic Team SSD4030P to view detailed technical specifications.
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