N-channel enhancement mode power MOSFET in a TO-252AA DPAK package, featuring a 3-pin (2+Tab) lead-frame SMT configuration with gull-wing leads. This single-element transistor supports a maximum drain-source voltage of 30V and a continuous drain current of 60A. It offers a low drain-source on-resistance of 7mΩ at 10V, with typical gate charge values of 28nC at 4.5V and 59nC at 10V. Maximum power dissipation is 50W, operating across a temperature range of -55°C to 175°C.
Etronic Team SSD6030N technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6(Max) |
| Package Width (mm) | 6.2(Max) |
| Package Height (mm) | 2.35(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 60A |
| Maximum Drain Source Resistance | 7@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|59@10VnC |
| Typical Gate Charge @ 10V | 59nC |
| Typical Input Capacitance @ Vds | 3100@15VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Etronic Team SSD6030N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.