Dual N-channel/P-channel enhancement mode power MOSFET in an 8-pin SO package. Features 25V drain-source voltage for N-channel and 30V for P-channel, with continuous drain currents of 5.5A (N-channel) and 4.5A (P-channel). Offers low on-resistance of 40mOhm (N-channel) and 55mOhm (P-channel) at 10V gate-source voltage. Surface-mount design with gull-wing leads, suitable for lead-frame SMT applications. Maximum power dissipation of 2000mW across an operating temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Etronic Team SSM4532 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
4.98(Max)
Package Width (mm)
3.99(Max)
Package Height (mm)
1.75(Max)
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain Source Voltage
25@N Channel|30@P ChannelV
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5.5@N Channel|4.5@P ChannelA
Maximum Drain Source Resistance
40@10V@N Channel|55@10V@P ChannelmOhm
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
15.5@P ChannelnC
Typical Input Capacitance @ Vds
512@8V@N Channel|395@15V@P ChannelpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Etronic Team SSM4532 Datasheet
Download the complete datasheet for Etronic Team SSM4532 to view detailed technical specifications.
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