Dual N-channel/P-channel enhancement mode power MOSFET, surface mountable in an 8-pin SO package with gull-wing leads. Features a maximum drain-source voltage of 30V, with continuous drain currents of 7A for the N-channel and 5A for the P-channel. Offers low on-resistance of 25mOhm (N-channel) and 45mOhm (P-channel) at 10V Vgs. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2000mW.
PackageSO
MountingSurface Mount
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Technical Specifications
Etronic Team SSM8405 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
4.98(Max)
Package Width (mm)
3.99(Max)
Package Height (mm)
1.75(Max)
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±22V
Maximum Continuous Drain Current
7@N Channel|5@P ChannelA
Maximum Drain Source Resistance
25@10V@N Channel|45@10V@P ChannelmOhm
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
14@N Channel|14@P ChannelnC
Typical Input Capacitance @ Vds
766@15V@N Channel|720@15V@P ChannelpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Etronic Team SSM8405 Datasheet
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