N-channel enhancement mode power MOSFET featuring dual dual drain configuration. 20V maximum drain-source voltage and 6A maximum continuous drain current. Surface mountable in an 8-pin SO package with gull-wing leads, measuring 4.98mm(L) x 3.99mm(W) x 1.75mm(H). Offers 30mOhm maximum drain-source resistance at 4V and 11nC typical gate charge at 4.5V. Maximum power dissipation is 2000mW, with an operating temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Etronic Team SSM9926A technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
4.98(Max)
Package Width (mm)
3.99(Max)
Package Height (mm)
1.75(Max)
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±10V
Maximum Continuous Drain Current
6A
Maximum Drain Source Resistance
30@4VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
810@8VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Etronic Team SSM9926A Datasheet
Download the complete datasheet for Etronic Team SSM9926A to view detailed technical specifications.
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