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Technical Specifications
Everlight ITR8102 technical specifications.
General
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 30V |
| Fall Time | 15000ns |
| Forward Current | 50mA |
| Lead Free | Lead Free |
| Max Collector Current | 30mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Max Output Current | 30mA |
| Mount | Through Hole |
| Number of Elements | 1 |
| Output Configuration | Phototransistor |
| Packaging | Bulk |
| Power Dissipation | 75mW |
| Radiation Hardening | No |
| Response Time | 15us |
| Reverse Breakdown Voltage | 5V |
| RoHS Compliant | Yes |
| Wavelength | 940nm |
Compliance
| RoHS | Compliant |
Datasheet
Everlight ITR8102 Datasheet
Download the complete datasheet for Everlight ITR8102 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.