
NPN phototransistor chip for optical sensing applications. Features a 940nm wavelength and a 30V collector-emitter breakdown voltage. This surface mount device offers a 50mA maximum collector current and a 400mV collector-emitter saturation voltage. Encased in a black, domed lens within an SMD/SMT package, it operates from -25°C to 85°C with a 75mW maximum power dissipation. Packaged on tape and reel for efficient assembly.
Everlight PT12-21B/TR8 technical specifications.
Download the complete datasheet for Everlight PT12-21B/TR8 to view detailed technical specifications.
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